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Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride
Nature
(2026) Cite this article
The Original Article was published on 30 September 2026
Correction to: Nature https://doi.org/10.1038/s41586-026-11047-9 Published online 30 September 2026
In the version of the article initially published, the y-axis label of Fig. 5d was “Id (A µm–1)” but should have been “Id (mA µm–1)”. This correction has been made to the HTML and PDF versions of the article.
These authors contributed equally: Chien-Chih Tseng, Chang-Hsun Huang, Jui-Cheng Kao
Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
Chien-Chih Tseng, Jui-Han Fu, Seong Rae Cho, Chenxi Lei, Kai Qi & Vincent Tung
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan
Department of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan